Cart (Loading....) | Create Account
Close category search window

Radiation damage effects on X- and gamma-ray N+NPP+ silicon detectors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Cimpoca, V. ; Nat. Inst. for Mater. Phys., Bucharest, Romania ; Petris, M. ; Ruscu, R. ; Moraru, R.
more authors

The paper describes some results concerning technology and behaviour of Xand gamma-ray N+PP+ silicon detectors used in physics research, industrial and medical radiography, and non-destructive testing. Devices manufactured under this technology proved to be stable after an exposure in high intensity gamma field with the dose range of 10 krad-5 Mrad. Nuclear radiation resistance was studied by irradiation with 60Co gamma source (1.17, 1.33 MeV) at dose rates of 59 krad/hour and 570 krad/hour

Published in:

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International  (Volume:2 )

Date of Conference:

7-11 Oct 1997

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.