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Radiation damage effects on X- and gamma-ray N+NPP+ silicon detectors

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6 Author(s)
Cimpoca, V. ; Nat. Inst. for Mater. Phys., Bucharest, Romania ; Petris, M. ; Ruscu, R. ; Moraru, R.
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The paper describes some results concerning technology and behaviour of Xand gamma-ray N+PP+ silicon detectors used in physics research, industrial and medical radiography, and non-destructive testing. Devices manufactured under this technology proved to be stable after an exposure in high intensity gamma field with the dose range of 10 krad-5 Mrad. Nuclear radiation resistance was studied by irradiation with 60Co gamma source (1.17, 1.33 MeV) at dose rates of 59 krad/hour and 570 krad/hour

Published in:

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International  (Volume:2 )

Date of Conference:

7-11 Oct 1997

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