By Topic

Lattice misfit and elastic strain distribution in heteroepitaxial InP/InGaAs structure

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
A. D. Stoica ; Nat. Inst. of Phys. of Mater., Bucharest, Romania ; N. Popa ; M. Stoica ; D. Sachelarie
more authors

We obtained a multilayer heteroepitaxial structure of In0.53 Ga0.47As-type deposed on (100) oriented InP substrate. We selected deliberately different thickness and doping concentrations of each layer for their potential applications in very high frequency bipolar transistors. A sequence of six epilayers were realized by vapour phase epitaxy. The characterization of crystallographic and semiconducting properties in correlation with technological processes is performed by TSC-method and by double crystal X-ray diffraction. We propose a kinematics model of X-ray diffraction in heteroepitaxial muitilayer structures of InP/InGaAs. It is based on a discontinuous lattice misfit and elastic strain distribution. The model fits well the rocking curves obtained for both (004) and (224) reflecting planes. The values of the lattice misfit and the elastic strains in the plane of lamellae were calculated

Published in:

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International  (Volume:2 )

Date of Conference:

7-11 Oct 1997