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An electrical model of a NPT-IGBT including transient temperature effects realized with PSpice device equations modeling

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3 Author(s)
Apeldoorn, O. ; Inst. for Power Electron. & Electr. Drives, Tech. Hochschule Aachen, Germany ; Schmitt, S. ; De Doncker, R.W.

To describe the electrical and thermal behaviour of an insulated gate bipolar transistor (IGBT) for circuit simulation, an analytical model is designed. The model uses a charge-control approach according to the HEFNER model. The effect of the transient chip-temperature on different physical parameters is defined by the thermal model. The numerical realization is made on the basis of nodal analysis and a linearization according to the Newton-Raphson method. All equations are implemented in C-code and combined with the simulator source code, using the PSpice device equation option. As a result, an internal model is created. Due to the thermal network, the IGBT has become a four terminal device. It can be applied to various thermal and electrical circuit topologies. A transient simulation of the device temperature allows short circuit or overload conditions to be studied in detail

Published in:

Industrial Electronics, 1997. ISIE '97., Proceedings of the IEEE International Symposium on  (Volume:2 )

Date of Conference:

7-11 Jul 1997