Integrated III–V Heterostructure Barrier Varactor frequency tripler on a silicon substrate

We report on the RF characterization of a monolithically integrated III-V Heterostructure Barrier Varactor (HBV) frequency tripler on a silicon substrate. A process of a low-temperature plasma-assisted bonding was introduced to transfer an InGaAs/InAlAs/AlAs HBV onto a silicon wafer. The frequency of operation for the presented frequency tripler is in the range of 96-108GHz. The maximum output power measured for the demonstrated device is 66mW, which corresponds to an efficiency of 10%.