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Low-Temperature Quantum Transport Characteristics in Single n-Channel Junctionless Nanowire Transistors

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6 Author(s)
Xiaoming Li ; Eng. Res. Center for Semicond. Integration Technol., Inst. of Semicond., Beijing, China ; Weihua Han ; Liuhong Ma ; Hao Wang
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A single n-channel junctionless nanowire transistor is fabricated and characterized for low-temperature quantum transport behavior. Transfer characteristics exhibit current oscillations below flat-band voltage (VFB) up to temperature 75 K, possibly due to cotunneling through unintentional quantum dots. Furthermore, regular current steps are observed above VFB, that is, each current plateau corresponds to a fully populated subband. Experimental result of transconductance peaks indicates that the subband energy spacing in the 1-D channel agrees well with theoretical prediction.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 5 )