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Intrinsic graphene/metal contact

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5 Author(s)
Nagashio, K. ; Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan ; Ifuku, R. ; Moriyama, T. ; Nishimura, T.
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This paper presents our recent understanding of metal/graphene contact in terms of intrinsic interface obtained from the comparison between resist-free and conventional EB processes, and discusses future challenges to reduce the contact resistivity.

Published in:

Electron Devices Meeting (IEDM), 2012 IEEE International

Date of Conference:

10-13 Dec. 2012