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Intrinsic graphene/metal contact

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5 Author(s)
K. Nagashio ; Department of Materials Engineering, The University of Tokyo 7-3-1, Hongo, Tokyo 113-8656, Japan ; R. Ifuku ; T. Moriyama ; T. Nishimura
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This paper presents our recent understanding of metal/graphene contact in terms of intrinsic interface obtained from the comparison between resist-free and conventional EB processes, and discusses future challenges to reduce the contact resistivity.

Published in:

Electron Devices Meeting (IEDM), 2012 IEEE International

Date of Conference:

10-13 Dec. 2012