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Origin of transient Vth shift after erase and its impact on 2D/3D structure charge trap flash memory cell operations

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7 Author(s)
Jong Kyung Park ; Dept. of Electr. Eng., KAIST, Daejeon, South Korea ; Dong-Il Moon ; Yang-Kyu Choi ; Seok-Hee Lee
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The mechanism of transient Vth shift after erase is studied in detail. It is concluded that the main mechanism is hole redistribution in the charge trap layer. A new erase scheme is proposed and demonstrated to reduce transient Vth shift. The impact of transient Vth shift on the 3D charge trap device is investigated, as well.

Published in:

Electron Devices Meeting (IEDM), 2012 IEEE International

Date of Conference:

10-13 Dec. 2012

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