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The mechanism of transient Vth shift after erase is studied in detail. It is concluded that the main mechanism is hole redistribution in the charge trap layer. A new erase scheme is proposed and demonstrated to reduce transient Vth shift. The impact of transient Vth shift on the 3D charge trap device is investigated, as well.
Electron Devices Meeting (IEDM), 2012 IEEE International
Date of Conference: 10-13 Dec. 2012