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Ultra thin hybrid floating gate and high-k dielectric as IGD enabler of highly scaled planar NAND flash technology

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11 Author(s)
G. S. Kar ; imec, Kapeldreef 75, B-3001 Leuven, Belgium ; L. Breuil ; P. Blomme ; H. Hody
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For the first time we demonstrate ultra-thin hybrid floating gate (HFG) planar NVM cell performance and reliability. Results not only confirm the high potential of the HFG thickness scaling down to 4 nm with improved program performance, but also show excellent post cycling data retention and P/E cycling endurance. The optimized ultra-thin HFG planar cells show potential for manufacturability and scalability for high density memory application.

Published in:

Electron Devices Meeting (IEDM), 2012 IEEE International

Date of Conference:

10-13 Dec. 2012