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Low Resistivity Tin-Doped Copper Nanowires

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5 Author(s)
Lin, C.-Y. ; Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan ; Wang, C.-Y. ; Hung, M.-H. ; Liu, T.-L.
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This letter presents Sn-doped Cu nanowires, Cu(Sn) NWs, synthesized by chemical vapor deposition using Cu and ${rm SnCl}_{2}$ powders as precursors at low temperature $({leqq}{400}^{circ}{rm C})$ and their electrical properties. The Sn not only plays a role as a catalyst to enhance reduction of Cu, but also as a dopant for Cu(Sn) NWs. The Sn thickness, substrate pretreatment, substrate temperature, process pressure, and precursor compositions are optimized to obtain high-density nanowires. Results show that Cu(Sn) NWs, 30 $mu{rm m}$ in length and 50–620 nm in diameter, are synthesized successfully at 350$^{circ}{rm C}$. The Cu(Sn) NWs exhibit low resistivity (2.84 $muOmegahbox{-}{rm cm}$), which is the lowest value reported thus far, and a failure current density of $3.16times 10^{7}~{rm A}/{rm cm}^{2}$.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 4 )