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High-performance surface acoustic wave resonators in the 1 to 3 GHz range using a ScAlN/6H-SiC structure

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5 Author(s)
Ken-ya Hashimoto ; Fellow; Graduate School of Engineering, Chiba University, Chiba, Japan ; Shuhei Sato ; Akihiko Teshigahara ; Takuya Nakamura
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This paper describes application of Sc-doped AlN (ScAlN) to wideband SAW devices in the 1 to 3 GHz range. First, it is shown theoretically that large SAW velocity and electromechanical coupling factor are simultaneously achievable when the ScAlN film is combined with a base substrate with extremely high acoustic wave velocities, such as diamond and SiC. Next, SAW delay lines are fabricated on the ScAlN/6H-SiC structure, and reasonable agreement between the theory and experiment is obtained. Finally, one-port SAW resonators are fabricated on the structure, and it is shown that high-performance is achievable in the 1 to 3 GHz range by use of the structure.

Published in:

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control  (Volume:60 ,  Issue: 3 )