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Dynamic Characterization and Impulse Response Modeling of Amplitude and Phase Response of Silicon Nanowires

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10 Author(s)
Cleary, C.S. ; Dept. of Phys., Univ. Coll. Cork, Cork, Ireland ; Hua Ji ; Dailey, J.M. ; Webb, R.P.
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Amplitude and phase dynamics of silicon nanowires were measured using time-resolved spectroscopy. Time shifts of the maximum phase change and minimum amplitude as a function of pump power due to saturation of the free-carrier density were observed. A phenomenological impulse response model used to fit the experimental data indicated that the free-carrier lifetime was between 7.5 ≤ τfc ≤ 16.2 ns, and the two-photon absorption coefficient and the Kerr coefficient were 3 × 10-12 m.W-1 and 4 ×10-18 m-18.W-1, respectively, for silicon nanowires with lengths varying from 3.6 to 14.9 mm.

Published in:

Photonics Journal, IEEE  (Volume:5 ,  Issue: 2 )