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Graphene-capped InAs/GaAs quantum dots

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5 Author(s)
Ajlani, Hosni ; Faculté des Sciences de Tunis, Université de Tunis El Manar, Campus, 2092 El Manar Tunis, Tunisie ; Othmen, Riadh ; Oueslati, Meherzi ; Cavanna, Antonnella
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Graphene was grown by chemical vapor deposition and successfully transferred onto InAs/GaAs quantum dots (QDs) grown by molecular beam epitaxy on a (001) GaAs substrate. To our knowledge, the hybrid structure of graphene replacing the conventional GaAs layer as a cap layer has not been explored until now. In this work, the authors present the photoluminescence (PL) and Raman spectroscopy study of InAs/GaAs graphene-capped QDs. The Raman measurements show an intense 2D peak at 2704 cm-1 which is the main characteristic indicating the presence of graphene. The recorded PL at temperature T = 300 K shows two sharp peaks located at 1.177 and 1.191 eV, which is attributed to radiative emission from the quantum dots. These peaks, which are generally very weak in InAs/GaAs quantum dots at this temperature, are instead very intense. The enhancement of the PL emission evidenced electron transfer from the graphene layer to the QDs.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:31 ,  Issue: 2 )

Date of Publication:

Mar 2013

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