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Measurement of Schottky barrier height tuning using dielectric dipole insertion method at metal–semiconductor interfaces by photoelectron spectroscopy and electrical characterization techniques

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6 Author(s)
Coss, Brian E. ; Department of Materials Science and Engineering, University of Texas at Dallas, 800 W Campbell Rd., Richardson Texas 75080 ; Sivasubramani, Prasanna ; Brennan, Barry ; Majhi, Prashant
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Schottky barrier height (ΦSBH) tuning from the insertion of dipole providing materials at the TaN/Si and TaN/GaAs interface are investigated using photoelectron spectroscopy and electrical techniques. In-situ processing and characterization of these contact interfaces is utilized to gain understanding of the formation of the dipole at the AlOx/SiO2 interface. Changes in both the band bending and vacuum work function by the insertion of AlOx/SiO2 at the interface are observed on both Si and GaAs substrates and are correlated with a large reduction in the ΦSBH on Si. Applications of this contact scheme for contact resistivity reduction, extremely shallow junctions, and Schottky barrier metal–oxide–semiconductor field effect devices are also discussed.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:31 ,  Issue: 2 )