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Transmission line with 2-kV HBM broadband ESD protection using BIMOS and SCR in advanced CMOS technologies

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6 Author(s)
Tekfouy Lim ; STMicroelectronics, 850 Rue Jean Monnet, 38926 Crolles Cedex, France ; Jean Jimenez ; Boris Heitz ; Philippe Benech
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Advanced CMOS technologies provide an easier way to realize radio-frequency integrated circuits (RFICs). However, transistor gates are getting smaller and electrostatic discharges (ESD) issues become more significant. Unfortunately, ESD protections parasitic capacitance limits the operating bandwidth of the RFICs. ESD protection size dimensions are also an issue to protect RFICs. This paper presents measurements results of ESD protection devices able to be implemented in an I/O pad in advanced CMOS technologies.

Published in:

2012 Asia Pacific Microwave Conference Proceedings

Date of Conference:

4-7 Dec. 2012