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An Etch-Stop Barrier Structure for GaN High-Electron-Mobility Transistors

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3 Author(s)
Bin Lu ; Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA ; Min Sun ; Palacios, T.

We present an etch-stop barrier structure for GaN high-electron-mobility transistors. With this new etch-stop structure, gate recess can be precisely controlled while maintaining a low surface defect density. Normally off GaN metal-insulator-semiconductor FETs fabricated using the new technology demonstrated a record effective channel mobility of 1131 cm2·V-1·s-1 with a subthreshold slope of 62 mV/decade. Due to the low interface density of states, these devices have very low hysteresis and negligible frequency dispersion in the capacitance-voltage (C-V) measurements.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 3 )