Cart (Loading....) | Create Account
Close category search window
 

Improved Thermal Stability and Reduced Contact Resistance of Ohmic Contacts on N-Face n-Type GaN With Laser-Assisted Doping

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Su Jin Kim ; Sch. of Electr. Eng., Korea Univ., Seoul, South Korea ; Tak Jeong ; Tae Geun Kim

The authors report reduced contact resistance and improved thermal stability of Ti/Al ohmic contacts to N-face n-GaN via laser-assisted Si doping. The contact resistivity of Ti (30 nm)/Al (200 nm) electrodes was reduced from 7.61 ×10-4 to 8.72 ×10-5 Ω·cm2 by applying laser-assisted Si diffusion to the GaN surface before Ti/Al deposition. Moreover, no degradation in specific contact resistivity was observed for the highly doped samples after annealing at 300 °C. During this process, Si dopant atoms are believed to diffuse into GaN, whereas Ga-N bonds are broken by laser-assisted doping, which eventually increases the number of nitrogen vacancies and generates sites at which Si atoms are substituted for Ga on the GaN surface. This suggestion was verified by secondary ion mass spectrometry and X-ray photoelectron spectroscopy.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 3 )

Date of Publication:

March 2013

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.