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Residue-free plasma etching of polyimide coatings for small pitch vias with improved step coverage

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4 Author(s)
Mimoun, Benjamin ; Electronic Components, Technology and Materials (ECTM) – DIMES, Delft University of Technology, Feldmannweg 17, 2628 CT Delft, The Netherlands ; Pham, Hoa T. M. ; Henneken, Vincent ; Dekker, Ronald

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The authors have found that patterning polyimide coatings containing organosilane adhesion promoter using pure oxygen plasma resulted in a thin silicon-rich residue layer. They show in this paper that adding small amounts of fluorine-containing gas to the etching gas mixture is necessary in order to achieve residue-free polyimide plasma etching. They report residue-free plasma etching of polyimide coatings with both isotropic and anisotropic profiles, using either metal or oxide hard masks. These etching methods are however not sufficient for the fabrication of high density metal filled vias in 10 μm thick polyimide coatings. In order to improve the metal step coverage over the vias while keeping the pitch as small as possible, the authors have developed a two-step etching recipe combining both isotropic and anisotropic profiles, resulting in wine-glass shaped vias.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:31 ,  Issue: 2 )