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High temperature AlGaN/GaN HFET microwave characterization

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1 Author(s)
Martin Tomáška ; Institute of Electronics and Photonics, Slovak University of Technology, Ilkovičova 3, 81219 Bratislava, Slovak Republic

The paper reports high temperature on-wafer microwave characterization setup for AlGaN/GaN HEMT devices. DC output characteristics as well as microwave parameters fT and fmax were measured and visualized in the form of 3-D diagrams in the temperature range from room temperature up to 425°C. Significant influence of temperature on DC and microwave properties was observed.

Published in:

Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on

Date of Conference:

11-15 Nov. 2012