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Electrothermal analysis of In0.12Al0.88N/GaN HEMTs

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7 Author(s)
Molnar, M. ; Device Anal. Group at Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria ; Donnarumma, G. ; Palankovski, V. ; Kuzmik, J.
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InAlN/GaN High Electron Mobility Transistors (HEMTs) are very popular because of their promising electrical and thermal properties. With the innovation of these structures and the development of fabrication processes, there are still many serious issues like current collapse or self-heating effects, which must be addressed. In this work, the DC device behavior is studied both experimentally and by means of two-dimensional hydrodynamic device simulations. Very good agreement between measurements and simulations with Minimos-NT is achieved using the hydrodynamic transport model including self-heating and impact ionization effects.

Published in:

Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on

Date of Conference:

11-15 Nov. 2012