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Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode

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5 Author(s)
Jae-Gil Lee ; Sch. of Electron. & Electr. Eng., Hongik Univ., Seoul, South Korea ; Bong-Ryeol Park ; Chun-Hyung Cho ; Kwang-Seok Seo
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A novel AlGaN/GaN-on-Si rectifier with a gated ohmic anode has been proposed to reduce the turn-on voltage without breakdown-voltage degradation. The combination of an ohmic anode and a recessed Schottky gate is responsible for the low turn-on voltage and thus increases the forward current. In comparison with conventional Schottky diodes, the forward current at 1.5 V was increased by 2 to 3 times, whereas no breakdown-voltage degradation was observed. The proposed rectifier with an anode-to-cathode distance of 18 μm exhibited a turn-on voltage of 0.37 V, a forward current density of 92 mA/mm at 1.5 V, and a breakdown voltage of 1440 V.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 2 )