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Antimonide (Sb) quantum-well MOSFETs are demonstrated with an integrated high- κ dielectric (1-nm Al2O3 /10-nm HfO2). The effect of interface trap density Dit on the dc drive current and transconductance gm is studied in detail using split C-V/G -V, pulsed I -V, and radio-frequency measurements. Pulsed I-V measurements show improved on current, transconductance, and subthreshold slope due to reduced charge trapping in the dielectric at high frequencies. The long-channel Sb nMOSFET exhibits effective electron mobility of 6000 cm2/V·s at high field (2 × 1012/cm2 of charge density Ns), which is 15× higher than Si NMOS inversion layer mobility, and one of the highest values reported for III-V MOSFETs. The short-channel Sb nMOSFET (LG = 150 nm) exhibits a cutoff frequency fT of 120 GHz, an fT × LG product of 18 GHz·μm , and a source-side injection velocity veff of 2.7 × 107 cm/s at a drain bias VDS of 0.75 V and a gate overdrive of 0.6 V.