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Effects occurring in the active elements of integrated circuits (IC), such MOSFETs, depend on dose accumulation summary, the absorption unit defects under the action of high energy particles. To modeled the MOSFETs parameters using SPICE simulation we must consider the degradation model of MOSFETs according with a relevant list of parameters for irradiation influence. That parameters must take into account also physics and topological characteristics of MOSTETs devices. Using this criteria, the simulation will involve a minimal set of parameters with relevant results in study of ionizing irradiation action.