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Metal-Gate/High- \kappa /Ge nMOS at Small CET With Higher Mobility Than \hbox {SiO}_{2}/\hbox {Si} at Wide Range Carrier Densities

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7 Author(s)
Liao, C.C. ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Ku, T.C. ; Lin, M.H. ; Lang Zeng
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High-performance TaN/TiLaO/La2O3/SiO2/ (111)-Ge nMOSFETs show high mobility of 432 cm2/V ·s at 1013 cm-2 carrier density (Ns), good 1.05 junction ideality factor, and small subthreshold swing of 101 mV/dec, at a small 1.1-nm capacitance-equivalent thickness (CET). This is the first report of higher mobility in the Ge nMOSFET than SiO2/Si universal mobility at wide medium-high Ns range and small CET of 1.1 nm, which is attributed to using the (111)-Ge substrate, 30-ns laser annealing, SiO2 interfacial layer, and YbGex/n-Ge contact.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 2 )