High-performance TaN/TiLaO/La2O3/SiO2/ (111)-Ge nMOSFETs show high mobility of 432 cm2/V ·s at 1013 cm-2 carrier density (Ns), good 1.05 junction ideality factor, and small subthreshold swing of 101 mV/dec, at a small 1.1-nm capacitance-equivalent thickness (CET). This is the first report of higher mobility in the Ge nMOSFET than SiO2/Si universal mobility at wide medium-high Ns range and small CET of 1.1 nm, which is attributed to using the (111)-Ge substrate, 30-ns laser annealing, SiO2 interfacial layer, and YbGex/n-Ge contact.
Published in:
Electron Device Letters, IEEE
(Volume:34
,
Issue:
2
)
Date of Publication: Feb. 2013
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