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A CMOS Integrated W-band Passive Imager

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9 Author(s)
Qun Jane Gu ; Dept. of Electr. & Comput. Eng., Univ. of California-Davis, Davis, CA, USA ; Kang Yang ; Yi Xue ; Zhiwei Xu
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This brief presents an integrated W-band passive imager, including a low-noise amplifier, a Dicke switch, a detector, a low-pass filter, a programmable-gain amplifier, and a 10-bit 20-MHz pipeline analog-to-digital converter (ADC). With digital outputs, the imager is ready to be interfaced with a digital signal processor to complete its system implementation. The chip is realized in a 65-nm CMOS technology. The measured average noise-equivalent power and responsivity are 32 fW/√{Hz} and 103 MV/W, respectively, which represents a noise-equivalent temperature difference of 1.0 K with 30-ms integration time. The integrated imager occupies a silicon area of 1.17 mm2 and burns 151 mW of power. To the authors' best knowledge, this is the first time that a millimeter-wave passive imager is integrated with an on-chip ADC to generate digital outputs.

Published in:

Circuits and Systems II: Express Briefs, IEEE Transactions on  (Volume:59 ,  Issue: 11 )

Date of Publication:

Nov. 2012

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