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A 4.6 GHz 162 Mb SRAM Design in 22 nm Tri-Gate CMOS Technology With Integrated Read and Write Assist Circuitry

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11 Author(s)
Karl, E. ; Intel Corp., Hillsboro, OR, USA ; Yih Wang ; Yong-Gee Ng ; Zheng Guo
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A 162 Mb voltage-scalable SRAM array design in 22 nm CMOS tri-gate logic technology is presented. The designs of a 0.092 μm2 bitcell for high density applications and a 0.108 μm2 bitcell for improved performance at low supply voltage are introduced. Transient voltage collapse and wordline under-drive peripheral assist circuits improve low-voltage operating margins and address fin quantization. Co-optimization of tri-gate transistors and circuits allow up to 70% improvement in frequency at low voltages and 85% improvement in density from a scaled 32 nm design. The low-voltage array design demonstrates 4.6 GHz operation at 1.0 V and 3.4 GHz operation at 0.8 V while achieving array densities up to 6.7 Mb/mm2.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:48 ,  Issue: 1 )