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Experimental study of surface distortions in silicon carbide caused by diffusion welding

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5 Author(s)
Mizsei, J. ; Dept. of Electron Devices, Tech. Univ. of Budapest, Budapest, Hungary ; Korolkov, O. ; Sleptsuk, N. ; Toompuu, J.
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This paper reports a summary of the experimental study of deep levels in a SiC crystal lattice caused by diffusion welding (DW). Investigations were carried out by DLTS and Kelvin Probe methods. Investigations revealed that DLTS method is not applicable for identification of surface states. Research conducted by the last method has shown an increase in the density of surface states after the diffusion welding from 2×1015 cm-2 to 3.5×1016 cm-2.

Published in:
Electronics Conference (BEC), 2012 13th Biennial Baltic

Date of Conference: 3-5 Oct. 2012

Page(s):
53 - 56
ISSN :
1736-3705
Print ISBN:
978-1-4673-2775-6
INSPEC Accession Number:
13172808
Conference Location :
Tallinn
Digital Object Identifier :
10.1109/BEC.2012.6376813
Product Type:
Conference Publications

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