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This paper reports a summary of the experimental study of deep levels in a SiC crystal lattice caused by diffusion welding (DW). Investigations were carried out by DLTS and Kelvin Probe methods. Investigations revealed that DLTS method is not applicable for identification of surface states. Research conducted by the last method has shown an increase in the density of surface states after the diffusion welding from 2×1015 cm-2 to 3.5×1016 cm-2.
Electronics Conference (BEC), 2012 13th Biennial Baltic
Date of Conference: 3-5 Oct. 2012