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NMOS transistor structures are widely used in IC's. Many manufacturing processes and operations are used in the production process. It is important to choose and deliver technological process (TP) parameters necessary for production for IC design. In this case, the problem addressed is redistribution of structures after a number of TP. So, the optimization of technological manufacturing processes of NMOS structures, and hence the channel area, is important. High-temperature TP (oxidation, diffusion, etc.) have been examined in previous works [4,9]. This paper will focus in the optimization of the channel formation by way of ion implantation (II). A variety of simulations are used for the optimization in the design phase. In this paper, the simulation is performed using ATHENA software package. It is also important to choose and propose the algorithms for optimization of technological processes. This paper offers an optimization algorithm for choosing the modes of II.
Electronics Conference (BEC), 2012 13th Biennial Baltic
Date of Conference: 3-5 Oct. 2012