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In this paper the reverse recovery of a fast GaAs pin-diode is investigated. Simulations show that the snappy behaviour observed at the measurements of the reverse recovery process of the experimental diode could take place only in cases where significant inductance in the measurement circuit is involved. Deep traps are not the cause for the snappiness effect.
Electronics Conference (BEC), 2012 13th Biennial Baltic
Date of Conference: 3-5 Oct. 2012