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Numerical simulations for reverse recovery process investigations of LPE GaAs power diodes

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4 Author(s)
Koel, A. ; Thomas Johann Seebeck Dept. of Electron., Tallinn, Estonia ; Rang, T. ; Voitovich, V. ; Toompuu, J.

In this paper the reverse recovery of a fast GaAs pin-diode is investigated. Simulations show that the snappy behaviour observed at the measurements of the reverse recovery process of the experimental diode could take place only in cases where significant inductance in the measurement circuit is involved. Deep traps are not the cause for the snappiness effect.

Published in:
Electronics Conference (BEC), 2012 13th Biennial Baltic

Date of Conference: 3-5 Oct. 2012

Page(s):
39 - 42
ISSN :
1736-3705
Print ISBN:
978-1-4673-2775-6
INSPEC Accession Number:
13172804
Conference Location :
Tallinn
Digital Object Identifier :
10.1109/BEC.2012.6376809
Product Type:
Conference Publications

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