Electrical Characteristics of $\hbox{Ba}_{0.6}\hbox{Sr}_{0.4} \hbox{TiO}_{3}$ Thin-Film Chip Capacitors for Embedded Passive Components

The single-layer 400 μm × 200 μm sized Ba
_0.6
Sr
_0.4
TiO
₃
thin-film embedded chip capacitors with two external electrodes fabricated on the surface of the chip capacitors have been demonstrated. The structure of the external electrodes placed on the same surface allows the reduction of connection length, resulting in low parasitic loss and noise of elecronic devices. The fabricated chip capacitors exhibited excellent electrical properties such as high capacitance density and dielectric constant (1687 nF/cm
²
and 452) and a low dielectric loss of 0.052 at 1 kHz, respectively. In addition, the chip capacitors exhibited the superior temperature stability of X5R (Δ
C
/
C
= ±15% at -55
^°
C to +85
^°
C) characteristics. Such a low leakage current density of ~ 0.15 μA/cm
²
at 3 V and a high breakdown voltage of 19.75 V were obtained as well. In conclusion, the chip capacitors are suggested as a candidate for the applications of embedded passive components.