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Phototransistor based Time-of-Flight range finding sensor in an 180 nm CMOS process

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5 Author(s)
Kostov, P. ; Inst. of Electrodynamics, Microwave & Circuit Eng., Vienna Univ. of Technol., Vienna, Austria ; Davidovic, M. ; Hofbauer, M. ; Gaberl, W.
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Time-of-Flight (TOF) sensors using different kinds of integrated phototransistors as photodetectors are presented in this work. The sensors as well as the phototransistors are implemented in a standard 180 nm CMOS process. A fill factor of 67 % is reached. At optimal working points of the phototransistors standard deviations better than 2.6 mm are achieved.

Published in:

Photonics Conference (IPC), 2012 IEEE

Date of Conference:

23-27 Sept. 2012

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