Referenced Items are not available for this document.
SEE measurements and TID response for 25 nm Micron Technology NAND flash memories are reported. Radiation results of MLC 64 Gb parts are compared with results from SLC 32 Gb parts. Also, scaling effects on SEE and TID are discussed.
Published in:
Radiation Effects Data Workshop (REDW), 2012 IEEE
Date of Conference: 16-20 July 2012
- Page(s):
- 1 - 6
- ISSN :
- 2154-0519
- Print ISBN:
- 978-1-4673-2730-5
- INSPEC Accession Number:
- 13135926
- Conference Location :
- Tucson, AZ
- Digital Object Identifier :
- 10.1109/REDW.2012.6353720
- Product Type:
- Conference Publications
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