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Heavy Ion Sensitivity of 16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM

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7 Author(s)
Grürmann, K. ; Inst. of Comput. & Network Eng., Tech. Univ. Braunschweig, Braunschweig, Germany ; Herrmann, M. ; Gliem, F. ; Schmidt, H.
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16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM memories have been tested under heavy ion irradiation. At high LET, 25nm NAND-Flash show MBUs at normal incidence. Techniques for SEFI mitigation in DDR3 SDRAM are studied.

Published in:
Radiation Effects Data Workshop (REDW), 2012 IEEE

Date of Conference: 16-20 July 2012

Page(s):
1 - 6
ISSN :
2154-0519
Print ISBN:
978-1-4673-2730-5
INSPEC Accession Number:
13135924
Conference Location :
Tucson, AZ
Digital Object Identifier :
10.1109/REDW.2012.6353718
Product Type:
Conference Publications

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