Skip to Main Content
We investigate the temporal stability of YBa2Cu3 O7-δ Josephson junctions created by ion irradiation through a nanoscale implant mask fabricated using electron beam lithography and reactive ion etching. A comparison of current-voltage characteristics measured for junctions after fabrication and eight years of storage at room temperature show a slight decrease in critical current and increase in normal state resistance consistent with broadening of the weak link from diffusion of defects. Shapiro step measurements performed eight years after fabrication reveal that device uniformity is maintained and is strong evidence that these devices have excellent temporal stability for applications.
Date of Publication: June 2013