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Millimeter-Wave Power Sensor Based on Silicon Rod Waveguide

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5 Author(s)
Generalov, A.A. ; Dept. of Radio Sci. & Eng., Aalto Univ., Aalto, Finland ; Lioubtchenko, D.V. ; Mallat, J.A. ; Ovchinnikov, V.
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This paper presents a novel type of RF power sensor, based on a metallic structure integrated into an mm-wave range dielectric rod waveguide made of Si. The metallic structure is employed as a bolometer. Numerical simulations of temperature distribution are shown. A prototype was tested at frequencies of 45 GHz-1 THz and a power levels from 0.1 to 500 mW. The power sensor showed the sensitivity of 0.51 Ω/mW resistance change.

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Terahertz Science and Technology, IEEE Transactions on  (Volume:2 ,  Issue: 6 )