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Low-power ultra-wideband power detector IC in 130 nm CMOS technology

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4 Author(s)
Xin Yang ; Grad. Sch. of Inf., Production & Syst., Waseda Univ., Kitakyushu, Japan ; Uchida, Y. ; Qing Liu ; Yoshimasu, T.

This paper presents a low operation voltage ultra-wideband power detector IC for microwave and millimeter-wave applications. The power detector circuit includes an nMOS transistor differential pair with a resistive feedback. The power detector IC was designed and fabricated using TSMC 130 nm CMOS technology. The detector IC exhibits an operation frequency from 100 MHz to 40 GHz at an operation voltage of 0.6 to 1.2 V. The minimum detectable power is -16 dBm at 40 GHz with a dc power consumption of only 0.116 mW.

Published in:

Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications (IMWS), 2012 IEEE MTT-S International

Date of Conference:

18-20 Sept. 2012