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Optimization of Quantum-Dot Molecular Beam Epitaxy for Broad Spectral Bandwidth Devices

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5 Author(s)
Majid, M.A. ; Comput., Electr., & Math. Sci. & Eng. (CEMSE) Div., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia ; Hugues, M. ; Vézian, S. ; Childs, D.T.D.
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The optimization of the key growth parameters for broad spectral bandwidth devices based on quantum dots is reported. A combination of atomic force microscopy, photoluminescence of test samples, and optoelectronic characterization of superluminescent diodes (SLDs) is used to optimize the growth conditions to obtain high-quality devices with large spectral bandwidth, radiative efficiency (due to a reduced defective-dot density), and thus output power. The defective-dot density is highlighted as being responsible for the degradation of device performance. An SLD device with 160 nm of bandwidth centered at 1230 nm is demonstrated.

Published in:

Photonics Journal, IEEE  (Volume:4 ,  Issue: 6 )