By Topic

Silicon-on-insulator based ZnO nanowire photodetector

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
7 Author(s)
Xie, Yong ; State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, 710072 Xi''an, China and Institut für Quantenmaterie/Gruppe Halbleiterphysik, Universität Ulm, 89069 Ulm, Germany ; Madel, Manfred ; Neuschl, Benjamin ; Jie, Wanqi
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The authors present here a technologically easy process to electrically contact ensembles of ZnO nanowires on silicon-on-insulator substrates for multiple sensor applications. Microtrenches defined by standard photolithography and etching processes were bridged by ZnO nanowires. The ZnO nanowires grown by a high temperature process show excellent crystalline quality as confirmed by photoluminescence. These wires connecting the opposite sides of the microtrenches were investigated here as solar-blind photosensitive detectors, but may equally well serve for any other sensing application, where the ZnO conductivity is altered by the attachment of specific gases, proteins, etc. The straightforward design allows for an easy integration into CMOS processes.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:30 ,  Issue: 6 )