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Substitutional-Gate MOSFETs With Composite ( \hbox {In}_{0.53}\hbox {Ga}_{0.47}\hbox {As}/\hbox {InAs}/\hbox {In}_{0.53}\hbox {Ga}_{0.47}\hbox {As}) Channels and Self-Aligned MBE Source–Drain Regrowth

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10 Author(s)
Sanghoon Lee ; Dept. of Electr. & Comput. Eng., Univ. of California-Santa Barbara, Santa Barbara, CA, USA ; Law, J.J.M. ; Carter, A.D. ; Thibeault, Brian J.
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We report enhancement-mode composite-channel (In0.53Ga0.47As/InAs/In0.53Ga0.47As) MOSFETs fabricated using a substitutional-gate process, with n+ relaxed InAs source-drain regions formed by regrowth by molecular beam epitaxy. A device with 70-nm gate length and 2-nm In0.53Ga0.47As/3.5-nm InAs/3-nm In0.53Ga0.47As channel showed a peak transconductance of greater than 0.76 mS/μm at Vds = 0.4 V and showed Id = 0.5 mA/μm at Vds = 0.4 V and Vgs - Vth = 0.7 V. The subthreshold swing at Vds = 0.1 V was 130 mV/dec.

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Electron Device Letters, IEEE  (Volume:33 ,  Issue: 11 )