By Topic

The Development of High-Rate Deposition Technology for Microcrystalline Silicon for High-Efficiency a-Si/μc-Si Tandem Solar Module

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

14 Author(s)
Matsumoto, M. ; Adv. Photovoltaic Dev. Center, Sanyo Electr. Co. Ltd., Gifu, Japan ; Aya, Y. ; Kuroda, A. ; Katayama, H.
more authors

A localized plasma confinement chemical vapor deposition (LPC-CVD) method with special cathode structures was proposed to solve problems of stability and uniformity of plasma under high pressure (>;1000 Pa). The initial conversion efficiency achieved by LPC-CVD for an a-Si/μc-Si tandem solar cell was 10.4% (1 cm2) for a 550 × 650 mm2 substrate at the deposition rate of 2.2 nm/s. Since then, we have been developing high-rate deposition technology for 1100 × 1400 mm2 substrates (Generation 5.5 (G5.5) size). A-Si/ μc-Si tandem solar modules have been achieved with an efficiency of 11.1% (initial) and 10.0% (stable) and a deposition rate of 2.4 nm/s on a G5.5-size substrate.

Published in:

Photovoltaics, IEEE Journal of  (Volume:3 ,  Issue: 1 )