By Topic

Effect of p-AlxGa1-xN electron blocking layer on optical and electrical properties in GaN-based light emitting diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Kim, Ki-Hyun ; Optoelectronic Materials and Devices Laboratory, Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung 429-793, South Korea ; Lee, Sang-Won ; Lee, Sung-Nam ; Kim, Jihoon

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The authors investigated the effect of p-type AlGaN electron blocking layer (EBL) on the optical and the electrical properties of GaN-based blue light-emitting diodes. 405- and 325-nm photoluminescence (PL) analyses showed the maximum intensities from 18% and 12% p-AlGaN EBL, respectively. Both PL methods would make a clear distinction between the optical qualities of InGaN well and the carrier transport from n-/p-type layers to active layer. From electroluminescence (EL) measurement, it found that the highest EL intensity was obtained at 12% p-AlGaN EBL, which was consistent with the result of 325-nm PL. From these results, the authors concluded that the 12% p-AlGaN EBL would effectively suppress the carrier overflow and that the problem for carrier transport was dominant at a higher than 18% Al in p-AlGaN EBL by measuring 325-nm PL and the photogenerated current.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:30 ,  Issue: 6 )