By Topic

Terahertz Generation and Detection Using Low Temperature Grown InGaAs-InAlAs Photoconductive Antennas at 1.55 \mu{\hbox {m}} Pulse Excitation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Kostakis, I. ; Sch. of Electr. & Electron. Eng., Univ. of Manchester, Manchester, UK ; Saeedkia, D. ; Missous, M.

Photoconductive antennas fabricated on novel low temperature (LT) beryllium (Be) doped InGaAs-InAlAs multi-quantum-well structures have been evaluated as THz emitters and detectors in a time-domain spectroscopy (TDS) system. We present system responses with THz pulses having spectral range up to 3 THz and power to noise ratio of 60 dB, making them competitive with LT-GaAs excited at 800 nm and among the highest reported to date for this material system.

Published in:

Terahertz Science and Technology, IEEE Transactions on  (Volume:2 ,  Issue: 6 )