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Voltage induced acoustic resonance in metal organic chemical vapor deposition SrTiO3 thin film

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6 Author(s)
Sbrockey, Nick M. ; Structured Materials Industries, Inc., Piscataway, New Jersey 08854 ; Tompa, Gary S. ; Kalkur, Thottam S. ; Zhang, Jialan
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A solidly mounted acoustic wave resonator was fabricated using a 150 nm thick SrTiO3 film deposited by metal organic chemical vapor deposition and platinum electrodes deposited by sputtering. The substrate was (0001) sapphire with a multilayer SiO2/Ta2O5 acoustic Bragg reflector. Dielectric characterization of the SrTiO3 film showed low leakage current and the characteristic capacitance–voltage behavior of a paraelectric film. Measurement of the radio frequency transmission characteristics showed no resonance with zero bias voltage across the SrTiO3 film. At 1.0 V applied DC bias, a well defined resonance peak was observed near 5.6 GHz. With increasing voltage across the SrTiO3 film, the resonance increased in intensity and shifted to lower frequency. The calculated electromechanical coupling coefficient for the device was 1.3% in the range of 3–5 V applied bias. The maximum observed quality factor was approximately 10.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:30 ,  Issue: 6 )