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Investigation on hot carrier effects in n-type short-channel junctionless nanowire transistors

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5 Author(s)
Chan-Hoon Park ; Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea ; Myung-Dong Ko ; Ki-Hyun Kim ; Jeong-Soo Lee
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Hot carrier induced degradation of the n-type junctionless nanowire transistor (JNT) and the inversion-mode NWFET (IMNT) has been experimentally compared. The JNT shows better hot carrier (HC) immunity than the IMNT. The lateral peak electrical field intensity is lower in the JNT than the IMNT, which is observed by TCAD simulation work.

Published in:

Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on

Date of Conference:

20-23 Aug. 2012