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Metrology for nanosystems and nanoelectronics reliability assessments

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3 Author(s)
Obeng, Y.S. ; Semicond. & Dimensional Metrol. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA ; Okoro, C.A. ; Kopanski, J.J.

The traditional models and techniques for studying reliability in integrated circuits may not be appropriate for nanoelectronics and nanosystems. In this paper, we present an overview of a number of materials and metrology techniques currently under development in our group at NIST. Among other topics, we will assess the techniques and models currently used for evaluating integrated circuit reliability, as well as present some new approaches.

Published in:

Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on

Date of Conference:

20-23 Aug. 2012

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