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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:33 Issue:11 Help

Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25- \mu\hbox {m} AlGaN/GaN HEMTs

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3 Author(s)
Silvestri, M. ; H.H. Wills Phys. Lab., Univ. of Bristol, Bristol, UK ; Uren, M.J. ; Kuball, M.

Using the dynamic transconductance frequency dispersion technique, we characterize unstressed and hot-electron stressed short-channel AlGaN/GaN high-electron-mobility transistors. The results reported in this letter demonstrate that the stress-induced degradation in dc and pulsed characteristics is unlikely to be ascribable to sizable trap generation at the AlGaN/GaN interface.

Published in:
Electron Device Letters, IEEE  (Volume:33 ,  Issue: 11 )

Date of Publication: Nov. 2012

Page(s):
1550 - 1552
ISSN :
0741-3106
INSPEC Accession Number:
13064066
Digital Object Identifier :
10.1109/LED.2012.2214200
Product Type:
Journals & Magazines
Date of Publication :
03 October 2012
Date of Current Version :
19 October 2012
Issue Date :
Nov. 2012
Sponsored by :
IEEE Electron Devices Society

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