Cart (Loading....) | Create Account
Close category search window
 

Fabrication of freestanding membrane GaN light-emitting diode on Si substrate for MEMS applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Tanae, T. ; Tohoku Univ., Sendai, Japan ; Kawaguchi, H. ; Iwabuchi, A. ; Hane, K.

Freestanding membrane GaN light emitting diode (LED) was fabricated on Si substrate for MEMS applications. GaN LED layer grown on Si substrate was used for the fabrication. Removing Si substrate by deep reactive ion etching (DRIE), the freestanding membrane structure of GaN LED was generated. In spite of the DRIE, no degradation was observed in the fabricated membrane LED. Using the membrane structure with grating, wavelength selective emission was obtained.

Published in:

Optical MEMS and Nanophotonics (OMN), 2012 International Conference on

Date of Conference:

6-9 Aug. 2012

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.