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Freestanding membrane GaN light emitting diode (LED) was fabricated on Si substrate for MEMS applications. GaN LED layer grown on Si substrate was used for the fabrication. Removing Si substrate by deep reactive ion etching (DRIE), the freestanding membrane structure of GaN LED was generated. In spite of the DRIE, no degradation was observed in the fabricated membrane LED. Using the membrane structure with grating, wavelength selective emission was obtained.