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Analysis of the energy structure of nitrogen δ-doped GaAs superlattices for high efficiency intermediate band solar cells

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6 Author(s)
Noguchi, S. ; Grad. Sch. of Sci. & Eng., Saitama Univ., Saitama, Japan ; Yagi, S. ; Hijikata, Y. ; Onabe, K.
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Nitrogen δ-doped GaAs superlattices were fabricated and their energy structures were investigated. Several transitions related to E+ band of nitrogen δ-doped regions were observed in photoreflectance (PR) spectra at energies ranging 1.5-1.7 eV for the superlattices at which no transitions were observed for uniformly doped GaAsN. The PR signal intensity of E+ related band transitions is significantly higher than those observed in uniformly doped GaAsN. This enhancement of E+ related band transitions is advantageous as an intermediate band material, and thus, nitrogen δ-doped GaAs superlattice structures are expected to be an excellent alternative for the use of intermediate band solar cells.

Published in:
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE

Date of Conference: 3-8 June 2012

Page(s):
000083 - 000086
ISSN :
0160-8371
Print ISBN:
978-1-4673-0064-3
INSPEC Accession Number:
13045680
Conference Location :
Austin, TX
Digital Object Identifier :
10.1109/PVSC.2012.6317573
Product Type:
Conference Publications

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