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Investigation of carrier escape mechanism in InAs/GaAs quantum dot solar cells

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5 Author(s)
Yushuai Dai ; NanoPower Res. Lab., Rochester Inst. of Technol., Rochester, NY, USA ; Bailey, C.G. ; Kerestes, C. ; Forbes, D.V.
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In order to enhance understanding of the short circuit improvement in InAs/GaAs quantum dot (QD) solar cells, the thermally assisted and tunneling mechanisms of carrier escape from the QD quantum confinement are investigated. The dependence of voltage biased spectral responsivity for QD solar cells at room temperature is studied to analyze carrier extraction through tunneling. Photoexcited carrier confinement and escape were also studied by means of temperature dependent spectral response (TDSR) and temperature dependent photoluminescence (TDPL). Energy required to move a carrier from the ground state to the first excited state, thermal activation energy (Ea), in a quantum dot is calculated from TDPL to be 114 meV. It is found that at room temperature carrier escape from the quantum dot confinement is affected by both thermal assisted escape and tunneling while at low temperature tunneling is the dominant in carrier escape from both wetting layer and QDs. For all temperature ranges, carrier exchange between ground states and excited states and carrier escape from ground states (GS) is first thermal escape to excited states (ES) then tunneling.

Published in:

Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE

Date of Conference:

3-8 June 2012

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