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W-band MMIC amplifiers based on 50-nm dual-gate InP HEMT

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5 Author(s)
Hongfei Yao ; Inst. of Microelectron., Beijing, China ; Yuxiong Cao ; Xiantai Wang ; Yinghui Zhong
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Two MMIC amplifiers have been developed in coplanar technology using 50-nm InAlAs/InGaAs HEMTs. The first is a sing-stage amplifier which used balanced double-stub matching networks for both input and output impedances matching. Measured gain is 8.2 dB @ 81.3 GHz, and the 3-dB bandwidth is at least 13.7 GHz. The second is a two-stage common-source power amplifier. A “#” type distributed transmission line networks has been developed and applied to inter-stage and output stage matching networks. This technique propose a new and efficient approach for impedance matching between transistors where DC blocking and separate bias supplies to the active devices are required. Measured gain is 10.1 dB @ 84 GHz and the 3-dB bandwidth is 14.7 GHz. The saturated power is 11.6 dBm @ 85 GHz, 3.6 dB higher than the above-mentioned single-HEMT amplifier. Measured data are in agreement with the simulation results.

Published in:

Millimeter Waves (GSMM), 2012 5th Global Symposium on

Date of Conference:

27-30 May 2012