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Assessment of NBTI in Presence of Self-Heating in High- k SOI FinFETs

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5 Author(s)
Monga, U. ; Intel Mobile Commun. GmbH, Neubiberg, Germany ; Khandelwal, S. ; Aghassi, J. ; Sedlmeir, J.
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We have experimentally investigated the threshold voltage shift due to negative bias temperature instability (NBTI). The NBTI stress in the absence of self-heating (SH) is performed at two different temperatures, i.e., T = 25°C and 125°C, at bias conditions: gate voltage Vgs = -2& V and drain voltage Vds = 0 V. To evaluate the effect of NBTI in the presence of SH, the stress is performed at room temperature and at Vgs = -2 V and Vds = -1 V. It has been observed that NBTI in the presence of SH causes a significant shift in the threshold voltage.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 11 )

Date of Publication:

Nov. 2012

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